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| AF4410N N-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID (A) 10 Product Summary BVDSS (V) 30 RDS(ON) (m) 13.5 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D Description Source Gate Drain SO-8 Ordering information AX Feature F :MOSFET PN 4410N X X X Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Aug 30, 2005 1/5 AF4410N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25C TA=70C TA=25C Rating 30 25 10 8 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A W W/C C C Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 50 Units C/W Electrical Characteristics at TJ=25C unless otherwise specified Symbol BVDSS BVDSS / TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=10A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=15V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=25V ID=10A, VDS=15V, VGS=5V VDS=25V, ID=1A, RG=3.3, VGS=5V RD=25 VGS=0V, VDS=15V, f=1.0MHz Min. 30 1 Typ. 0.037 20 13.5 4 7 14 16 21 15 1160 240 165 Max. 13.5 22 3 1 uA 25 100 nA nC Units V V/oC m V S ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge 2 Test Conditions IS=2.1A, VGS=0V IS=5A, VGS=0V, dl/dt=100A/s o Min. - Typ. 17.1 12 Max. 1.2 - Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board, 125 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width 300us, duty cycle 2%. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.1 Aug 30, 2005 AF4410N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.1 Aug 30, 2005 AF4410N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.1 Aug 30, 2005 AF4410N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Logo Part Number 4410N AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SO-8 D 8 7 6 5 E1 E 1 2 e 3 B 4 DETAIL A L A1 A C DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 o o o 0 4 8 1.27 TYP. Anachip Corp. www.anachip.com.tw 5/5 Rev. 1.1 Aug 30, 2005 |
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